VEC2616 no. a1822-1/6 features ? on-resistance nch: r ds (on)1=62m (typ.), pch: r ds (on)1=105m (typ.) ? 4v drive ? n-channel mosfet + p-channel mosfet speci cations absolute maximum ratings at ta=25c parameter symbol conditions n-channel p-channel unit drain-to-source voltage v dss 60 --60 v gate-to-source voltage v gss 20 20 v drain current (dc) i d 3 --2.5 a drain current (pulse) i dp pw 10 s, duty cycle 1% 12 --10 a allowable power dissipation p d when mounted on ceramic substrate (900mm 2 0.8mm) 1unit 0.9 w total dissipation p t when mounted on ceramic substrate (900mm 2 0.8mm) 1.0 w channel temperature tch 150 c storage temperature tstg --55 to +150 c package dimensions unit : mm (typ) 7012-002 ordering number : ena1822 91510pe tk im tc-00002461 sanyo semiconductors data sheet VEC2616 n-channel and p-channel silicon mosfets general-purpose switching device applications http://semicon.sanyo.com/en/network product & package information ? package : vec8 ? jeita, jedec : - ? minimum packing quantity : 3,000 pcs./reel packing type : tl marking electrical connection 2.9 0.65 2.8 0.2 5 0.25 2.3 0.75 0.07 0.3 1234 8765 0.15 1 : source1 2 : gate1 3 : source2 4 : gate2 5 : drain2 6 : drain2 7 : drain1 8 : drain1 sanyo : vec8 tl 87 6 5 1234 up lot no.
VEC2616 no. a1822-2/6 electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max [n-channel] drain-to-source breakdown voltage v (br)dss i d =1ma, v gs =0v 60 v zero-gate voltage drain current i dss v ds =60v, v gs =0v 1 a gate-to-source leakage current i gss v gs =16v, v ds =0v 10 a cutoff voltage v gs (off) v ds =10v, i d =1ma 1.2 2.6 v forward transfer admittance | yfs | v ds =10v, i d =1.5a 2.6 s static drain-to-source on-state resistance r ds (on)1 i d =1.5a, v gs =10v 62 80 m r ds (on)2 i d =0.75a, v gs =4.5v 76 106 m r ds (on)3 i d =0.75a, v gs =4v 83 116 m input capacitance ciss v ds =20v, f=1mhz 505 pf output capacitance coss v ds =20v, f=1mhz 57 pf reverse transfer capacitance crss v ds =20v, f=1mhz 37 pf turn-on delay time t d (on) see speci ed test circuit. 7.3 ns rise time t r see speci ed test circuit. 7.5 ns turn-off delay time t d (off) see speci ed test circuit. 41 ns fall time t f see speci ed test circuit. 22 ns total gate charge qg v ds =30v, v gs =10v, i d =3a 10 nc gate-to-source charge qgs v ds =30v, v gs =10v, i d =3a 1.6 nc gate-to-drain ?miller? charge qgd v ds =30v, v gs =10v, i d =3a 2.1 nc diode forward voltage v sd i s =3a, v gs =0v 0.81 1.2 v [p-channel] drain-to-source breakdown voltage v (br)dss i d =--1ma, v gs =0v --60 v zero-gate voltage drain current i dss v ds =- -60v, v gs =0v --1 a gate-to-sour ce leakage curr ent i gss v gs =16v, v ds =0v 10 a cutoff voltage v gs (off) v ds =--10v, i d =--1ma --1.2 --2.6 v forward transfer admittance | yfs | v ds =--10v, i d =--1.5a 3.9 s static drain-to-source on-state resistance r ds (on)1 i d =--1.5a, v gs =--10v 105 137 m r ds (on)2 i d =--0.75a, v gs =--4.5v 128 180 m r ds (on)3 i d =--0.75a, v gs =--4v 138 194 m input capacitance ciss v ds =--20v, f=1mhz 420 pf output capacitance coss v ds =--20v, f=1mhz 54 pf reverse transfer capacitance crss v ds =--20v, f=1mhz 44 pf turn-on delay time t d (on) see speci ed test circuit. 6.4 ns rise time t r see speci ed test circuit. 9.8 ns turn-off delay time t d (off) see speci ed test circuit. 65 ns fall time t f see speci ed test circuit. 36 ns total gate charge qg v ds =--30v, v gs =--10v, i d =--2.5a 11 nc gate-to-source charge qgs v ds =--30v, v gs =--10v, i d =--2.5a 1.4 nc gate-to-drain ?miller? charge qgd v ds =--30v, v gs =--10v, i d =--2.5a 2 nc diode forward voltage v sd i s =--2.5a, v gs =0v --0.83 --1.2 v
VEC2616 no. a1822-3/6 switching time test circuit [n-channel] [p-channel] pw=10s d.c.1% p. g 50 g s d i d =1.5a r l =20 v dd =30v v out v in 10v 0v v in VEC2616 pw=10s d.c.1% p. g 50 g s d i d = --1.5a r l =20 v dd = --30v v out v in 0v --10v v in VEC2616 [nch] [nch] [nch] [nch] r ds (on) -- ta static drain-to-source on-state resistance, r ds (on) -- m ambient temperature, ta -- c r ds (on) -- v gs static drain-to-source on-state resistance, r ds (on) -- m gate-to-source voltage, v gs -- v it15538 --60 20 120 40 90 70 140 60 30 50 100 130 150 110 80 160 --40 --20 0 20 40 60 80 100 120 140 160 v gs =4.5v, i d =0.75a v gs =10.0v, i d =1.5a v gs =4.0v, i d =0.75a 0481 21 4 2 6 10 16 it15537 170 30 40 60 50 70 90 80 130 110 100 140 120 160 150 ta=25 c i d =0.75a 1.5a i d -- v ds i d -- v gs drain-to-source voltage, v ds -- v drain current, i d -- a gate-to-source voltage, v gs -- v drain current, i d -- a 2.0 3.0 5.5 6.0 1.0 1.5 4.0 2.5 3.5 0.5 4.5 5.0 0 0 1.0 2.0 4.0 4.5 0.20.1 3.0 1.5 0.5 2.5 3.5 0 0.4 1.0 0.8 0.6 0.3 0.5 0.9 0.7 it13789 0 0.5 1.0 2.0 3.0 1.5 2.5 3.5 4.0 it13790 ta=75 c -- 2 5 c 4.0v 3.5v 3.0v v ds =10v 15.0v 10.0v 25 c 4.5v v gs =2.5v 7.0v
VEC2616 no. a1822-4/6 [nch] [nch] [nch] [nch] [nch] [nch] [pch] [pch] sw time -- i d ciss, coss, crss -- v ds i s -- v sd drain current, i d -- a switching time, sw time -- ns diode forward voltage, v sd -- v source current, i s -- a drain-to-source voltage, v ds -- v ciss, coss, crss -- pf drain current, i d -- a 5 3 2 3 2 7 7 5 10 it13795 it13793 0.1 1.0 23 57 23 57 02 04 0 10 30 50 60 100 10 2 1000 7 5 3 2 7 5 3 it13796 it13794 0.2 0.4 0.6 0.8 1.0 1.2 0.01 0.1 7 5 3 2 2 1.0 7 5 3 2 v gs =0v --25 c 25 c ta=75 c t d (on) t d (off) t f t r v dd =30v v gs =10v ciss coss crss f=1mhz 0.01 0.1 0.1 27 35 2 10 27 35 1.0 7 35 1.0 7 5 3 2 2 7 7 5 3 v ds =10v 75 c ta= --25 c 25 c 10 7 5 3 | y fs | -- i d forward transfer admittance, | y fs | -- s v gs -- qg total gate charge, qg -- nc gate-to-source voltage, v gs -- v 047 9 6 23 5 18 1 0 0 4 6 8 10 9 7 5 1 2 3 it13797 v ds =30v i d =3a -- 2 -- 1 -- 5 -- 3 -- 4 0 0 --0.5 --1.5 --2.0 --1.0 --2.5 0 --1.0 --0.8 --0.6 --0.1 --0.2 --0.4 --0.9 --0.7 --0.3 --0.5 it15911 0 --1.0 --0.5 --2.0 --1.5 --3.0 --2.5 --3.5 it15912 ta=75 c --25 c v gs = --2.5v v ds = --10v --3.5v --16 .0v 25 c --10.0v --4.0v --4.5v it15910 0.01 0.1 23 5 23 57 7 1.0 23 57 2 0.01 2 0.1 1.0 10 2 3 3 5 7 2 3 5 7 2 3 5 7 i dp =12a (pw 10s) i d =3a 100s dc operation (ta=25 c) 1ms 100ms 10ms operation in this area is limited by r ds (on). 10 100 357 --6.0v --3.0v a s o drain-to-source voltage, v ds -- v drain current, i d -- a i d -- v gs drain current, i d -- a gate-to-source voltage, v gs -- v drain-to-source voltage, v ds -- v i d -- v ds drain current, i d -- a ta=25 c single pulse when mounted on ceramic substrate (900mm 2 0.8mm) 1unit
VEC2616 no. a1822-5/6 gate-to-source voltage, v gs -- v static drain-to-source on-state resistance, r ds (on) -- m ambient temperature, ta -- c r ds (on) -- ta r ds (on) -- v gs static drain-to-source on-state resistance, r ds (on) -- m i s -- v sd source current, i s -- a diode forward voltage, v sd -- v drain current, i d -- a | y fs | -- i d forward transfer admittance, | y fs | -- s sw time -- i d switching time, sw time -- ns drain current, i d -- a ciss, coss, crss -- v ds drain-to-source voltage, v ds -- v ciss, coss, crss -- pf a s o drain-to-source voltage, v ds -- v drain current, i d -- a total gate charge, qg -- nc v gs -- qg gate-to-source voltage, v gs -- v 0 0 3 -- 1 -- 2 5 -- 3 -- 4 7 -- 5 -- 6 -- 7 9 -- 8 --10 -- 9 11 12 4 6 8 10 v ds = --30v i d = --2.5a it15919 --60 0 50 100 150 200 300 250 --40 --20 0 20 40 60 80 100 120 140 160 v gs = --4.5v, i d = --0.75a v gs = --10.0v, i d = --1.5a it15914 0--2 200 -- 4 300 0 50 100 250 150 --6 --8 --12 --10 --14 --16 ta=25 c i d = --1.5a --0.75a it15913 0 2 5 7 -- 5 1000 100 7 5 3 3 2 2 --20--15--10 --25 --30 --35 --40 --45 --50 --55 --60 f=1mhz it15918 ciss coss crss --0.1 100 2 3 10 2 2 --1.0 22 7 357 35 7 5 7 5 3 it15917 t d(on) t r v dd = --30v v gs = --10v t f t d(off) --0.01 --0.4 --0.6 --0.8 --1.0 --1.2 --0.2 --0.1 2 7 5 3 2 --1.0 2 7 7 5 3 v gs =0v --0.01 --0.1 0.1 --1.0 2 3 57 2 3 57 2 3 5 1.0 2 7 5 3 2 10 7 5 3 2 v ds = --10v it15915 it15916 ta= --25 c --25 c 25c ta=75 c 25c 75 c v gs = --4.0v, i d = --0.75a 7 5 3 [pch] [pch] [pch] [pch] [pch] [pch] [pch] [pch] it15920 --0.01 --0.1 23 5 23 57 7 --1.0 23 57 2 --0.01 2 --0.1 --1.0 --10 2 3 5 7 2 3 5 7 2 3 5 7 i dp = --10a (pw 10s) i d = --2.5a 100s dc operation (ta=25 c) 1ms 100ms 10ms operation in this area is limited by r ds (on). --10 --100 357 ta=25 c single pulse when mounted on ceramic substrate (900mm 2 0.8mm) 1unit
VEC2616 no. a1822-6/6 ps this catalog provides information as of september, 2010. speci cations and information herein are subject to change without notice. note on usage : since the VEC2616 is a mosfet product, please avoid using this device in the vicinity of highly charged objects. any and all sanyo semiconductor co.,ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, av equipment, communication device, office equipment, industrial equipment etc.). the products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. if you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. if there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer ' s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. sanyo semiconductor co.,ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein. sanyo semiconductor co.,ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. it is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo semiconductor co.,ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of sanyo semiconductor co.,ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor co.,ltd. product that you intend to use. information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of sanyo semiconductor co.,ltd. or any third party. sanyo semiconductor co.,ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. ambient temperature, ta -- c p d -- ta allowable power dissipation, p d -- w 0 0 20 40 60 1.0 0.6 0.2 0.8 0.9 0.4 80 1.2 140 100 120 160 it15921 1unit [nch/pch] when mounted on ceramic substrate (900mm 2 0.8mm) total dissipation
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